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Chin. Opt. Lett.
 Home  List of Issues    Issue 12 , Vol. 01 , 2003    A passively Q-switched diode pumped Yb:YAG microchip laser


A passively Q-switched diode pumped Yb:YAG microchip laser
Haisheng Wu, Ping Yan, Mali Gong, Qiang Liu
Digital Photonics Laboratory, Department of Precision Instruments, Tsinghua University, Beijing 100084

Chin. Opt. Lett., 2003, 01(12): pp.697-697-

DOI:
Topic:Lasers and laser optics
Keywords(OCIS Code): 140.3540  140.3480  140.3580  

Abstract
A passively Q-switched diode pumped Yb:YAG microchip laser with Cr^(4+):YAG saturable absorber mirror is reported. The TEM00 laser pulses are obtained with 1.7-μJ pulse energy, 15-ns pulse width, 0.11-kW peak power, and a repetition rate of 2.2 kHz at 1049 nm. The doped concentration and dimension of Yb:YAG microchip crystal are 10 at.-% and Ф5 × 0.6 mm^(2), respectively.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Received:2003/7/22
Accepted:
Posted online:

Get Citation: Haisheng Wu, Ping Yan, Mali Gong, Qiang Liu, "A passively Q-switched diode pumped Yb:YAG microchip laser," Chin. Opt. Lett. 01(12), 697-697-(2003)

Note: H. Wu’s e-mail address is wuhs99@mails.tsinghua.edu.cn.



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