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Chin. Opt. Lett.
 Home  List of Issues    Issue 07 , Vol. 02 , 2004    Diode-pumped vertical external cavity surface emitting laser at 1 um

Diode-pumped vertical external cavity surface emitting laser at 1 um
Xiaoping Guo1;3, Meng Chen1, Gang Li1, Yanrong Song2, Bingyuan Zhang1, Zhigang Zhang2
1Laser Engineering College, Beijing University of Technology, Beijing 1000222School of Mathematics and Physical Science, Beijing University of Technology, Beijing 1000223Research Institute of Educational Equipment, Ministry of Education, Beijing 100080

Chin. Opt. Lett., 2004, 02(07): pp.405-405-

Topic:Lasers and laser optics
Keywords(OCIS Code): 140.0140  140.3460  140.3480  

We demonstrated a diode-pumped vertical external cavity surface emitting laser with simple plane-concave cavity. When the pump power at a wavelength of 811.6 nm is 1.5 W, the maximum output power is 40.4 mW at the wavelength of 1005.8 nm. Theoptical-optical conversion efficiency is 2.7%.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Get Citation: Xiaoping Guo, Meng Chen, Gang Li, Yanrong Song, Bingyuan Zhang, Zhigang Zhang, "Diode-pumped vertical external cavity surface emitting laser at 1 um," Chin. Opt. Lett. 02(07), 405-405-(2004)

Note: The authors thank I. Sagnes and D. Romanini for the supply of the VECSEL chip. X. Guo's e-mail address is guoxp1105@yahoo.com.cn.


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