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Chin. Opt. Lett.
 Home  List of Issues    Issue 11 , Vol. 15 , 2017    10.3788/COL201715.111602

Investigation on optical and photoluminescence properties of organic semiconductor Al-Alq3 thin films for organic light-emitting diodes application
Fan Zhang, Cong Wang, Kai Yin, Xinran Dong, Yuxin Song, Yaxiang Tian, and Ji’an Duan
State Key Laboratory of High Performance and Complex Manufacturing, College of Mechanical and Electrical Engineering, [Central South University], Changsha 410083, China

Chin. Opt. Lett., 2017, 15(11): pp.111602

Keywords(OCIS Code): 160.4890  120.2130  250.5230  

The optical constants, photoluminescence properties, and resistivity of Al-Alq3 thin films prepared by the thermal co-evaporation method on a silicon substrate are studied with various Al fractions. A variable angle spectroscopic ellipsometry is employed to determine the optical constants in the wavelength from 300 to 1200 nm at incidence angles of 65°, 70°, and 75°, respectively. Both the refractive indices and extinction coefficient apparently increase with increasing Al fractions. The intensity of photoluminescence spectra gradually increases with decreasing Al fractions due to intrinsic energy level transition of Alq3 organic semiconductor in the ultraviolet wave band. The resistivity decreases from 42.1 to 3.36 Ω·cm with increasing Al fraction from 40% to 70%, resulting in a larger emission intensity in photoluminescence spectra for the 40% Al fraction sample.

Copyright: © 2003-2012 . This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Posted online:2017/10/19

Get Citation: Fan Zhang, Cong Wang, Kai Yin, Xinran Dong, Yuxin Song, Yaxiang Tian, and Ji’an Duan, "Investigation on optical and photoluminescence properties of organic semiconductor Al-Alq3 thin films for organic light-emitting diodes application," Chin. Opt. Lett. 15(11), 111602(2017)

Note: This work was supported by the National Natural Science Foundation of China (NSFC) (Nos. 91323301 and 51505505), the Natural Science Foundation of Hunan Province (No. 2016JJ3147), the China Postdoctoral Science Foundation (Nos. 2015M572264 and 2016T90757), the Self-selected Topic Fund of State Key Laboratory of High Performance and Complex Manufacturing (No. ZZYJKT2015-08), and the Fundamental Research Funds for the Central Universities of Central South University.


1. H. Sasabe, and J. Kido, J. Mater. Chem. C 1, 1699 (2013).

2. B. Geffroy, P. L. Roy, and C. Prat, Polym. Int. 55, 572 (2006).

3. J. W. Park, D. C. Shin, and S. H. Park, Semicond. Sci. Technol. 26, 034002 (2011).

4. J. T. Smith, B. O’Brien, Y. K. Lee, E. J. Bawolek, and J. B. Christen, J. Disp. Technol. 10, 514 (2014).

5. C. Wang, J. Shao, Z. Mu, W. Liu, and G. Ni, Chin. Opt. Lett. 12, 040402 (2014).

6. W. M. Liu, Y. Zhang, and G. Ni, Opt. Express 20, 6225 (2012).

7. J. Shao, X. Yuan, Z. Mu, and G. Ni, Chin. Opt. Lett. 14, 062501 (2016).

8. K. Mullen, and U. Scherf, Organic Light Emitting Devices: Synthesis Properties and Applications (Wiley VCH, 2006).

9. H. J. Kim, T. Tamura, Y. Nakayama, Y. Noguchi, and H. Ishii, J. Photopolym. Sci. Tech. 25, 183 (2012).

10. S. Kim, P. Choi, S. Kim, H. Park, D. Baek, S. Kim, and B. Choi, J. Nanosci. Nanotechno. 16, 4742 (2016).

11. T. Fuhrmann, and J. Salbeck, MRS Bull. 28, 354 (2003).

12. B. Masenelli, A. Gagnaire, L. Berthelot, J. Tardy, and J. Joseph, J. Appl. Phys. 85, 3032 (1999).

13. I. I. Mikhailov, S. A. Tarasov, I. A. Lamkin, P. O. Tadtaev, L. I. Kozlovich, A. V. Solomonov, and E. M. Stepanov, J. Phys. Conf. Ser. 741, 012103 (2016).

14. C. Xiang, W. Koo, F. So, H. Sasabe, and J. Kido, Light: Sci. Appl. 2, e74 (2013).

15. N. H. Kim, Y. H. Kim, J. A. Yoon, S. Yoo, K. W. Cheah, F. Zhu, and W. Y. Kim, Chin. Opt. Lett. 14, 043001 (2016).

16. G. Shi, J. Wang, C. Xu, X. Li, and Z. Wang, Chin. Opt. Lett. 13, 042301 (2015).

17. B. Lussem, M. Riede, and K. Leo, Phys. Status Solid. A 210, 9 (2013).

18. Y. Watanabe, H. Sasabe, D. Yokoyama, T. Beppu, H. Katagiri, Y. J. Pu, and J. Kido, Adv. Opt. Mater. 3, 769 (2015).

19. M. M. Shi, J. J. Lin, Y. W. Shi, M. Ouyang, M. Wang, and H. Z. Chen, Mater. Chem. Phys. 115, 841 (2009).

20. M. B. Khan, and Z. H. Khan, J. Lumin. 188, 418 (2017).

21. M. Cuba, and G. Muralidharan, J. Fluoresc. 25, 1629 (2015).

22. H. Tompkins, and E. A. Irene, Handbook of Ellipsometry (William Andrew, 2005).

23. Y. Meng, S. Chen, and G. Jin, Chin. Opt. Lett. 8, 114 (2010).

24. B. Fodor, P. Kozma, S. Burger, M. Fried, and P. Petrik, Thin Solid Films 617, 20 (2016).

25. E. D. Palik, Handbook of Optical Constants of Solids (Academic, 1998).

26. A. B. Djurisic, C. Y. Kwong, W. L. Guo, T. W. Lau, E. H. Li, H. S. Kwok, L. S. M. Lam, and W. K. Chan, Thin Solid Films 416, 233 (2002).

27. H. Kim, A. Pique, J. S. Horwitz, H. Murata, Z. H. Kafafi, C. M. Gilmore, and D. B. Chrisey, Thin solid films 377, 798 (2000).

28. H. Okuda, K. Takeshita, S. Ochiai, Y. Kitajima, S. Sakurai, and H. Ogawa, J. Appl. Crystallogr. 45, 119 (2012).

29. C. Himcinschi, N. Meyer, S. Hartmann, M. Gersdorff, M. Friedrich, H. H. Johannes, W. Kowalsky, M. Schwambera, G. Strauch, M. Heuken, and D. R. T. Zahn, Appl. Phys. A 80, 551 (2005).

30. A. Farahzadia, M. Beigmohamadi, P. Niyamakom, S. Kremers, N. Meyer, M. Heuken, and M. Wuttig, Appl. Surf. Sci. 256, 6612 (2010).

31. J. Y. Tsutsumi, H. Matsuzaki, N. Kanai, T. Yamada, and T. Hasegawa, JPN J. Appl. Phys. 53, 05HB12 (2014).

32. F. L. Wong, M. K. Fung, S. W. Tong, C. S. Lee, and S. T. Lee, Thin Solid Films 466, 225 (2004).

33. S. H. Jeong, S. Kho, D. Jung, S. B. Lee, and J. H. Boo, Surf. Coat. Tech. 174, 187 (2003).

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